1 /*
2 * Copyright (C) 2021 Sartura Ltd.
3 * Copyright (C) 2021 Globalscale technologies, Inc.
4 * Copyright (C) 2021 Marvell International Ltd.
5 *
6 * SPDX-License-Identifier: BSD-3-Clause
7 * https://spdx.org/licenses
8 */
9
10 #include <arch_helpers.h>
11 #include <common/debug.h>
12
13 #include <mv_ddr_if.h>
14 #include <plat_marvell.h>
15
16 /*
17 * This function may modify the default DRAM parameters
18 * based on information received from SPD or bootloader
19 * configuration located on non volatile storage
20 */
plat_marvell_dram_update_topology(void)21 void plat_marvell_dram_update_topology(void)
22 {
23 }
24
25 /*
26 * This struct provides the DRAM training code with
27 * the appropriate board DRAM configuration
28 */
29 #if DDR_TOPOLOGY == 0
30 static struct mv_ddr_topology_map board_topology_map_2g = {
31 /* 1CS 4Gb x4 devices of Samsung K4A4G085WF */
32 DEBUG_LEVEL_ERROR,
33 0x1, /* active interfaces */
34 /* cs_mask, mirror, dqs_swap, ck_swap X subphys */
35 { { { {0x1, 0x2, 0, 0},
36 {0x1, 0x2, 0, 0},
37 {0x1, 0x2, 0, 0},
38 {0x1, 0x2, 0, 0},
39 {0x1, 0x2, 0, 0},
40 {0x1, 0x2, 0, 0},
41 {0x1, 0x2, 0, 0},
42 {0x1, 0x2, 0, 0},
43 {0x1, 0x2, 0, 0} },
44 SPEED_BIN_DDR_2400R, /* speed_bin */
45 MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */
46 MV_DDR_DIE_CAP_4GBIT, /* die capacity */
47 MV_DDR_FREQ_SAR, /* frequency */
48 0, 0, /* cas_l, cas_wl */
49 MV_DDR_TEMP_LOW} }, /* temperature */
50 BUS_MASK_32BIT, /* subphys mask */
51 MV_DDR_CFG_DEFAULT, /* ddr configuration data source */
52 NOT_COMBINED, /* ddr twin-die combined*/
53 { {0} }, /* raw spd data */
54 {0}, /* timing parameters */
55 { /* electrical configuration */
56 { /* memory electrical configuration */
57 MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */
58 {
59 MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
60 MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */
61 },
62 {
63 MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */
64 MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */
65 },
66 MV_DDR_DIC_RZQ_DIV7 /* dic */
67 },
68 { /* phy electrical configuration */
69 MV_DDR_OHM_30, /* data_drv_p */
70 MV_DDR_OHM_30, /* data_drv_n */
71 MV_DDR_OHM_30, /* ctrl_drv_p */
72 MV_DDR_OHM_30, /* ctrl_drv_n */
73 {
74 MV_DDR_OHM_60, /* odt_p 1cs */
75 MV_DDR_OHM_120 /* odt_p 2cs */
76 },
77 {
78 MV_DDR_OHM_60, /* odt_n 1cs */
79 MV_DDR_OHM_120 /* odt_n 2cs */
80 },
81 },
82 { /* mac electrical configuration */
83 MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */
84 MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */
85 MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */
86 },
87 }
88 };
89 #endif
90
91 #if DDR_TOPOLOGY == 1
92 static struct mv_ddr_topology_map board_topology_map_4g = {
93 /* 1CS 8Gb x4 devices of Samsung K4A8G085WC-BCTD */
94 DEBUG_LEVEL_ERROR,
95 0x1, /* active interfaces */
96 /* cs_mask, mirror, dqs_swap, ck_swap X subphys */
97 { { { {0x1, 0x2, 0, 0},
98 {0x1, 0x2, 0, 0},
99 {0x1, 0x2, 0, 0},
100 {0x1, 0x2, 0, 0},
101 {0x1, 0x2, 0, 0},
102 {0x1, 0x2, 0, 0},
103 {0x1, 0x2, 0, 0},
104 {0x1, 0x2, 0, 0},
105 {0x1, 0x2, 0, 0} },
106 SPEED_BIN_DDR_2400R, /* speed_bin */
107 MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */
108 MV_DDR_DIE_CAP_8GBIT, /* die capacity */
109 MV_DDR_FREQ_SAR, /* frequency */
110 0, 0, /* cas_l, cas_wl */
111 MV_DDR_TEMP_LOW} }, /* temperature */
112 BUS_MASK_32BIT, /* subphys mask */
113 MV_DDR_CFG_DEFAULT, /* ddr configuration data source */
114 NOT_COMBINED, /* ddr twin-die combined*/
115 { {0} }, /* raw spd data */
116 {0}, /* timing parameters */
117 { /* electrical configuration */
118 { /* memory electrical configuration */
119 MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */
120 {
121 MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
122 MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */
123 },
124 {
125 MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */
126 MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */
127 },
128 MV_DDR_DIC_RZQ_DIV7 /* dic */
129 },
130 { /* phy electrical configuration */
131 MV_DDR_OHM_30, /* data_drv_p */
132 MV_DDR_OHM_30, /* data_drv_n */
133 MV_DDR_OHM_30, /* ctrl_drv_p */
134 MV_DDR_OHM_30, /* ctrl_drv_n */
135 {
136 MV_DDR_OHM_60, /* odt_p 1cs */
137 MV_DDR_OHM_120 /* odt_p 2cs */
138 },
139 {
140 MV_DDR_OHM_60, /* odt_n 1cs */
141 MV_DDR_OHM_120 /* odt_n 2cs */
142 },
143 },
144 { /* mac electrical configuration */
145 MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */
146 MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */
147 MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */
148 },
149 }
150 };
151 #endif
152
153 #if DDR_TOPOLOGY == 2
154 static struct mv_ddr_topology_map board_topology_map_8g = {
155 /* 2CS 8Gb x8 devices of Micron MT40A1G8WE-083E IT */
156 DEBUG_LEVEL_ERROR,
157 0x1, /* active interfaces */
158 /* cs_mask, mirror, dqs_swap, ck_swap X subphys */
159 { { { {0x3, 0x2, 0, 0},
160 {0x3, 0x2, 0, 0},
161 {0x3, 0x2, 0, 0},
162 {0x3, 0x2, 0, 0},
163 {0x3, 0x2, 0, 0},
164 {0x3, 0x2, 0, 0},
165 {0x3, 0x2, 0, 0},
166 {0x3, 0x2, 0, 0},
167 {0x3, 0x2, 0, 0} },
168 SPEED_BIN_DDR_2400R, /* speed_bin */
169 MV_DDR_DEV_WIDTH_8BIT, /* sdram device width */
170 MV_DDR_DIE_CAP_8GBIT, /* die capacity */
171 MV_DDR_FREQ_SAR, /* frequency */
172 0, 0, /* cas_l, cas_wl */
173 MV_DDR_TEMP_LOW} }, /* temperature */
174 BUS_MASK_32BIT, /* subphys mask */
175 MV_DDR_CFG_DEFAULT, /* ddr configuration data source */
176 NOT_COMBINED, /* ddr twin-die combined*/
177 { {0} }, /* raw spd data */
178 {0}, /* timing parameters */
179 { /* electrical configuration */
180 { /* memory electrical configuration */
181 MV_DDR_RTT_NOM_PARK_RZQ_DISABLE, /* rtt_nom */
182 {
183 MV_DDR_RTT_NOM_PARK_RZQ_DIV4, /* rtt_park 1cs */
184 MV_DDR_RTT_NOM_PARK_RZQ_DIV1 /* rtt_park 2cs */
185 },
186 {
187 MV_DDR_RTT_WR_DYN_ODT_OFF, /* rtt_wr 1cs */
188 MV_DDR_RTT_WR_RZQ_DIV2 /* rtt_wr 2cs */
189 },
190 MV_DDR_DIC_RZQ_DIV7 /* dic */
191 },
192 { /* phy electrical configuration */
193 MV_DDR_OHM_30, /* data_drv_p */
194 MV_DDR_OHM_30, /* data_drv_n */
195 MV_DDR_OHM_30, /* ctrl_drv_p */
196 MV_DDR_OHM_30, /* ctrl_drv_n */
197 {
198 MV_DDR_OHM_60, /* odt_p 1cs */
199 MV_DDR_OHM_120 /* odt_p 2cs */
200 },
201 {
202 MV_DDR_OHM_60, /* odt_n 1cs */
203 MV_DDR_OHM_120 /* odt_n 2cs */
204 },
205 },
206 { /* mac electrical configuration */
207 MV_DDR_ODT_CFG_NORMAL, /* odtcfg_pattern */
208 MV_DDR_ODT_CFG_ALWAYS_ON, /* odtcfg_write */
209 MV_DDR_ODT_CFG_NORMAL, /* odtcfg_read */
210 },
211 }
212 };
213 #endif
214
mv_ddr_topology_map_get(void)215 struct mv_ddr_topology_map *mv_ddr_topology_map_get(void)
216 {
217 /* a70x0_mochabin board supports 3 DDR4 models (2G/1CS, 4G/1CS, 8G/2CS) */
218 #if DDR_TOPOLOGY == 0
219 return &board_topology_map_2g;
220 #elif DDR_TOPOLOGY == 1
221 return &board_topology_map_4g;
222 #elif DDR_TOPOLOGY == 2
223 return &board_topology_map_8g;
224 #else
225 #error "Unknown DDR topology"
226 #endif
227 }
228
